Author Affiliations
Abstract
1 School of Opto-Electronic Engineering, Changchun University of Science and Technology, Changchun 130022, China
2 Key Laboratory of the Ministry of Education for Optoelectronic Measurement Technology and Instrument, Beijing Information Science & Technology University, Beijing 100192, China
We systematically investigate the influence of growth interruption time on the properties of InAs/GaSb type-II superlattices (T2SLs) epitaxial materials grown by molecular beam epitaxy (MBE). X-ray diffraction (XRD) and atomic force microscope (AFM) are used to characterize the material quality and morphology. The full width at half maximum (FWHM) of the XRD 0th satellite peaks ranges from 32'' to 41'', and the root mean square (RMS) roughness on a 5 μm×5 μm scan area is 0.2 nm. Photoluminescence (PL) test is used to reveal the influence of the growth interruption time on the optical property. Grazing incidence X-ray reflectivity (GIXRR) measurements are performed to analyze the roughness of the interface. The interface roughness (0.24 nm) is optimal when the interruption time is 0.5 s. The crystal quality of T2SLs can be optimized with appropriate interruption time by MBE, which is a guide for the material epitaxy of high performance T2SL infrared detector.
光电子快报（英文版）
2023, 19(3): 155
